US12131948: Techniques for void-free material depositions (Part-2)

Published in US Patent, 2023

Recommended citation: M. A. Zeeshan, K. Chan, S. Kallakuri*, S. Varghese, J. Hautala. 2023. "Techniques for void-free material depositions (Part-2)." US Patent. US12131948 /files/pdf/patents/US12131948.pdf